Structure of 6H silicon carbide/silicon dioxide interface trapping defects
- 20 April 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (17) , 3406-3408
- https://doi.org/10.1063/1.1723693
Abstract
We utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H siliconcarbide and the SiO 2 gate dielectric in SiCmetal-oxide-semiconductorfield effect transistors. The SDR response is strongly correlated to SiC/SiO 2 interface recombination currents. The magnitude of the SDR response is correlated with processing-induced changes in interface trap density, an extremely strong indication that we are observing the dominating interface/near interface trapping defects. The SDR response is extremely large, as large as one part in 350.Keywords
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