ZnSe field-effect transistors
- 15 October 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (16) , 1663-1665
- https://doi.org/10.1063/1.104079
Abstract
We report the first demonstration of ZnSe metal‐semiconductor field‐effect transistors. These new devices were fabricated from n‐type Cl‐doped epitaxial ZnSe layers grown by molecular beam epitaxy on (100) oriented semi‐insulating Cr‐doped GaAs substrates. Epitaxial layers with room‐temperature carrier concentrations of 1.6×1017 cm−3 and electron mobilities ranging from 400 to 500 cm2/V s were used for device fabrication. Au was used as a Schottky gate contact. Either In or a multilevel metallization scheme using Cr and In was employed for the source and drain ohmic contacts. Depletion‐mode transistor operation was observed for structures with 5 and 100 μm gate lengths and varying gate widths. The 5 μm gate length by 200 μm gate width device structures exhibited transconductances of 0.5 mS/mm.Keywords
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