Lateral photocurrent spreading in single quantum well infrared photodetectors
- 1 June 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (22) , 2865-2867
- https://doi.org/10.1063/1.121481
Abstract
Lateral physical effects in single quantum well infrared photodetectors (SQWIPs) under nonuniform illumination over the detector area are considered. These effects are due mainly to the in-plane transport of the photoinduced charge in the QW. The length of the lateral photocurrent spreading is determined by the in-plane conductivity of the carriers in the QW and characteristic time of the QW recharging, and can be as large as 101–104 μm. Closed-form analytical expressions for SQWIP responsivity for modulated infrared signal and modulation transfer function are obtained. Possible techniques to suppress lateral photocurrent spreading are discussed.Keywords
All Related Versions
This publication has 15 references indexed in Scilit:
- Image transformation in integrated quantum well infrared photodetector-light emitting diodeJournal of Applied Physics, 1997
- Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diodeApplied Physics Letters, 1997
- Unusual capacitance behavior of quantum well infrared photodetectorsApplied Physics Letters, 1997
- Pixelless infrared imaging deviceElectronics Letters, 1997
- Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectorsApplied Physics Letters, 1997
- Transient photoconductivity in quantum well infrared photodetectorsApplied Physics Letters, 1996
- Small-signal performance of a quantum well diodeIEEE Transactions on Electron Devices, 1996
- Contact and distributed effects in quantum well infrared photodetectorsApplied Physics Letters, 1995
- Electron density modulation effect in a quantum-well infrared phototransistorJournal of Applied Physics, 1995
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993