Schottky contacts on chemically etched p- and n-type indium phosphide

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Abstract
The Schottky‐barrier energy φB for Al, Ni, Co, Pd, Au, and Ag contacts on chemically etched 〈100〉 surfaces of both p‐ and n‐type InP were measured and the metallurgical behavior of the contact structures were studied using Auger electron spectroscopy. φB was found to be a function of the chemical reactivity of the contact metal with the InP substrate. Extensive outdiffusion of In was observed in the Au and Ag contacts. The results indicate that the chemical effects at the metal‐semiconductor interface are a determining factor in the formation of InP Schottky barriers.