Properties of cobalt in FZ and CZ silicon studied by Mössbauer spectroscopy
- 1 October 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7) , 3629-3633
- https://doi.org/10.1063/1.341400
Abstract
Mössbauer effect investigations were performed on the Co system in n- and p-type silicon [floating zone (FZ) and Czochralski (CZ)]. The samples were saturated with Co-57 between 1080 and 1100 °C and quenched and annealed isochronically up to 600 °C and isothermally for times up to 22 h. In n-type material, a transformation of a quadrupole doublet into a single line with increasing annealing temperature is observed, independent of the P and O concentrations. In p-type samples, three quadrupole doublets are found after quenching, which are attributed to different CoB pairs following an interpretation given by Bergholz [Physica, 116B, 312 (1983)]. These quadrupole doublets transform during annealing at first into the quadrupole doublet and then into the single line found in n-type silicon. This transformation is interpreted as the decomposition of the CoB pairs followed by the precipitation of the interstitial Co. The transformation observed in n-type Si is interpreted as a morphological change of the CoSi2 precipitate.This publication has 10 references indexed in Scilit:
- Cobalt-silicide structures studied by Mössbauer spectroscopyHyperfine Interactions, 1987
- Distribution of Cobalt in Silicon after Phosphorous Diffusion GetteringMaterials Science Forum, 1986
- Mechanism of phosphorus diffusion gettering of cobalt in silicon studied by Mössbauer spectroscopyJournal of Applied Physics, 1985
- Theoretical Evidence for Low-Spin Ground States of Early Interstitial and Late SubstitutionalTransition-Metal Ions in SiliconPhysical Review Letters, 1985
- Palladium-Test: A Tool to Evaluate Gettering EfficiencyMRS Proceedings, 1984
- Pairing reactions of interstitial cobalt and shallow acceptors in silicon observed in Mössbauer spectroscopyPhysica B+C, 1983
- A mössbauer-spectroscopy study of the annealing of supersaturated solutions of57Co in siliconPhysica Status Solidi (a), 1983
- Transition metals in siliconApplied Physics A, 1983
- A simple extension of the pair approximation to AC hopping conductivity in disordered systems to embrace the DC limitJournal of Physics C: Solid State Physics, 1981
- Precipitation of cobalt in silicon studied by Mössbauer spectroscopyPhysica Status Solidi (a), 1978