Mechanism of phosphorus diffusion gettering of cobalt in silicon studied by Mössbauer spectroscopy
- 1 October 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (7) , 2519-2523
- https://doi.org/10.1063/1.335930
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Phosphorus gettering and intrinsic gettering of nickel in siliconApplied Physics Letters, 1984
- Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitationsJournal of Applied Physics, 1981
- On the diffusion of Co in Si and its applicability to the Si intrinsic defect problemJournal of Physics D: Applied Physics, 1981
- Evaluation of the antimony concentration profile in p-n diffusion junctions by an anodization technique and sheet resistivity measurementsSurface Technology, 1978
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- Diffusion Gettering of Au and Cu in SiliconJournal of the Electrochemical Society, 1975
- Alternative relationship for converting incremental sheet resistivity measurements into profiles of impurity concentrationSolid-State Electronics, 1967
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Measurement of the Sheet Resistivity of a Square Wafer with a Square Four-Point ProbeReview of Scientific Instruments, 1960