Experimental determination of the avalanche region of one-sided abrupt barriers

Publisher Website

1 March 1974

journal article
Published by Elsevier in Solid-State Electronics

Vol. 17 (3) , 239-244
https://doi.org/10.1016/0038-1101(74)90011-2

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Avalanche region width in various structures of IMPATT diodes
Proceedings of the IEEE, 1971
Measurement of the ionization rates in diffused silicon p-n junctions
Solid-State Electronics, 1970
Effet du sens de croissance du champ électrique sur les conditions de claquage par avalanche (Directional effect of electric-field growth on a avalanche-breakdown conditions)
Electronics Letters, 1969
Ionization Rates of Holes and Electrons in Silicon
Physical Review B, 1964
Ionization Rates for Holes and Electrons in Silicon
Physical Review B, 1957