Si/SiO 2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering
- 17 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (11) , 1414-1416
- https://doi.org/10.1063/1.118592
Abstract
The roughness of the Si(100)/SiO2 interface is measured using both surface second harmonic generation (SSHG) and x-ray scattering. A comparison between these techniques shows a clear correlation for typical industrial oxides, despite the techniques being sensitive to differing regions of the roughness spectrum. The SSHG measurements are made using ∼10 fs pulses centered at 850 nm and at 80 MHz repetition rate. The short pulses produce a similar signal to noise ratio as earlier measurements, but use much lower average power, thus avoiding possible artifacts such as sample heating.Keywords
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