Resistivity of the solid solutions (Co-Ni)Si2

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Abstract
Solid solutions of CoSi2 and NiSi2 were prepared from the solid‐state reaction of thin films of Ni‐Co alloys with their silicon substrates. The room‐temperature resistivity of these silicide solid solutions does not increase parabolically, but (within the sensitivity of the measurements) varies linearly with composition. A model is proposed which explains the very weak alloy scattering on the basis that in these disilicides (a) the d bands are pushed below the Fermi level, (b) conduction occurs mostly via s electrons, and (c) there is no s‐d scattering.