The long-term relaxation and build-up transient of photoconductivity in Si1-xGex/Si quantum wells
- 5 June 1995
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 7 (23) , 4525-4532
- https://doi.org/10.1088/0953-8984/7/23/021
Abstract
The long-term relaxation and build-up transient of photoconductivity has been observed in Si1-xGex/Si quantum wells. The long-term relaxation behaviour of photoconductivity can be described by a stretched-exponential function, Ipc(t)=Ipc(0) exp(=(t/ tau )beta )(0< beta 1-xGex/Si quantum wells.Keywords
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