Cyclotron resonance studies of GaInP and AlGaInP
- 23 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (21) , 2849-2851
- https://doi.org/10.1063/1.111445
Abstract
The electron effective masses for Al0.15Ga0.35In0.5P and Ga0.5In0.5P have been investigated using conventional and optically detected cyclotron resonance. For AlGaInP (partly ordered) it is determined to be m*=(0.14±0.01) m0. For disordered GaInP the mass is found to be m*=(0.092±0.003) m0 and for ordered material (band gap reduction ∼50 meV) m*=(0.088±0.003) m0. The experimentally deduced values are compared with those obtained from five‐band k⋅p calculation.Keywords
This publication has 8 references indexed in Scilit:
- Electron effective mass in direct-band-gapalloysPhysical Review B, 1993
- Exciton localization effects and heterojunction band offset in (Ga,In)P-(Al,Ga,In)P multiple quantum wellsPhysical Review B, 1993
- Metalorganic chemical vapor deposition growth of Ga0.5In0.5P ordered alloys by phosphine modulationJournal of Crystal Growth, 1992
- Determination of the GaInP/AlGaInP band offsetApplied Physics Letters, 1990
- Band-gap narrowing in ordered and disordered semiconductor alloysApplied Physics Letters, 1990
- Polarized band-edge photoluminescence and ordering inPPhysical Review Letters, 1989
- Band gaps and spin-orbit splitting of ordered and disordered and alloysPhysical Review B, 1989
- perturbation theory in III-V compounds and alloys: a reexaminationPhysical Review B, 1977