Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
- 11 August 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (6) , 800-802
- https://doi.org/10.1063/1.119650
Abstract
Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.
Keywords
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