Depth profiling of ion-implanted alloys
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (1) , 283-289
- https://doi.org/10.1063/1.327367
Abstract
Proton‐induced x‐ray emission analysis (PIXEA) and inert gas ion sputtering (IS) have been utilized to generate elemental profiles for three types of ion‐implanted iron alloys. The data were fitted (utilizing a computer program) with symmetrical Gaussian profiles yielding values for the range and range straggle. These parameters were then compared with those obtained from the theory of Lindhard, Scharff, and Schiott (LSS). Changes in the profiles due to annealing were investigated, and values for the diffusion coefficient were obtained assuming Fick’s law. For 25‐keV Ni+ and Cr+ in iron, the profiles as‐implanted, agree reasonably well with LSS theory and exhibit ’’normal’’ diffusion characteristics at 500 °C. For 25‐keV Al+ in iron, the profile as implanted is much broader than predicted and exhibits substantial enhanced diffusion at temperatures up to 500 °C.This publication has 13 references indexed in Scilit:
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