Dissociation kinetics of hydrogen-passivated defects at the interface
- 15 March 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (12) , 8393-8403
- https://doi.org/10.1103/physrevb.61.8393
Abstract
An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as of paramagnetic centers at the interface. Previous work had reported simple exponential decay of vs time, taken as key evidence for the process obeying the first-order rate equation where and the single-valued activation energy. This inference, however, suffered from inadequate data. In contrast, experimental upgrading reveals manifest nonsimple exponential decay, which, within the simple thermal model, reveals the existence of a distinct spread in Incorporation of Gaussian spread in leads to a consistent generalized simple thermal model, that matches physical insight. The broad range of data enabled unbiased determination of the physical parameters involved, giving and attempt frequency close to the Si-H waging mode frequency, which provides a clue to the atomic dissociation mechanism. The spread results from the interfacial stress-induced variations in defect morphology. The body of data is found incompatible with second-order kinetics, thus exposing dissociation as an individual process. Combination with the previous generalized thermal model for passivation with culminates in a consistent unified picture of the
Keywords
This publication has 50 references indexed in Scilit:
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994
- Interactions of deuterium with ion-irradiated SiO2 on SiJournal of Applied Physics, 1990
- Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen AnnealingJournal of the Electrochemical Society, 1988
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- Electronic states at the silicon-silicon dioxide interfaceProgress in Surface Science, 1977
- High-Temperature Annealing of Oxidized Silicon SurfacesJournal of the Electrochemical Society, 1971
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Stabilization of MOS devicesSolid-State Electronics, 1967