Electro-optic voltage profiling of modulation-doped GaAs/AlGaAs heterostructures
- 1 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (18) , 1763-1765
- https://doi.org/10.1063/1.101284
Abstract
The electro‐optic effect of GaAs is applied to profile the voltage distribution of the two‐dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.Keywords
This publication has 12 references indexed in Scilit:
- Use of the lateral photoeffect to study sample quality in GaAs/AlGaAs heterostructuresJournal of Applied Physics, 1988
- Topography of AlGaAs/GaAs heterostructures using field-effect liquid crystalsSemiconductor Science and Technology, 1988
- Electro-optic measurement of standing waves in a GaAs coplanar waveguideApplied Physics Letters, 1987
- New technique to detect the GaAs semi-insulating surface property—cw electro-optic probingApplied Physics Letters, 1987
- Equipotential distribution in the quantum Hall effect in GaAs-AlGaAs heterostructuresJournal of Physics C: Solid State Physics, 1986
- Electrooptic sampling in GaAs integrated circuitsIEEE Journal of Quantum Electronics, 1986
- Subpicosecond electrooptic sampling: Principles and applicationsIEEE Journal of Quantum Electronics, 1986
- Hall potential distribution in quantum Hall experimentsJournal of Physics C: Solid State Physics, 1985
- Subpicosecond electrical samplingIEEE Journal of Quantum Electronics, 1983
- Electron beam testing: Methods and applicationsScanning, 1983