Small-polaron transport in thin films ofSiNx:H

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Abstract
We have performed I-V measurements on films of plasma silicon nitride 100–300 Å thick and in the temperature range 8–300 K. The conductivities are in qualitative agreement with those of previous studies on similar material. The I-V characteristics indicate a crossover from an ohmic regime at low voltage to a shallow-trap space-charge-limited regime at high voltage. The conductivity extracted from the ohmic regime is compatible with a small-polaron transport mechanism. Vibrational energies calculated with this model are in reasonable agreement with values from Raman and infrared measurements.