Low-Temperature Dependence of the Electrical Resistivity of Degenerate-Type Germanium
- 22 November 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 15 (21) , 828-830
- https://doi.org/10.1103/physrevlett.15.828
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.15.828Keywords
This publication has 7 references indexed in Scilit:
- Mean Free Path of Electrons and Magnetomorphic Effects in Small Single Crystals of GalliumPhysical Review B, 1965
- Electrical properties and resonance scattering in heavily doped semiconductorsSolid State Communications, 1964
- Large-Strain Dependence of the Acceptor Binding Energy in GermaniumPhysical Review B, 1962
- Electrical Properties of Heavily Doped n-Type GermaniumJournal of the Physics Society Japan, 1961
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- The contribution to the electrical resistance of metals from collisions between electronsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937