Electrical Properties of Heavily Doped n-Type Germanium
- 1 April 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (4) , 687-694
- https://doi.org/10.1143/jpsj.16.687
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Tunneling Probability in Germanium p–n JunctionsJournal of the Physics Society Japan, 1960
- Piezoresistance in Heavily Doped-Type GermaniumPhysical Review B, 1958
- Magnetoresistance Symmetry Relation in-GermaniumPhysical Review B, 1958
- Magnetic Susceptibility of GermaniumPhysical Review B, 1957
- Transition from Classical to Quantum Statistics in Germanium Semiconductors at Low TemperaturePhysical Review B, 1947