Preparation and ESCA analysis of the germanium surface: electrical characterization of the Al2O3 Ge and Al2O3:GeO2 Ge structures
- 30 November 1994
- journal article
- research article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 39 (1) , 85-89
- https://doi.org/10.1016/0254-0584(94)90137-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Calculations of electron inelastic mean free paths for 31 materialsSurface and Interface Analysis, 1988
- Preparation of Germanium Nitride Films by Low Pressure Chemical Vapor DepositionJournal of the Electrochemical Society, 1987
- Characterisation of n -channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidationElectronics Letters, 1987
- Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductorPhysica Status Solidi (a), 1983
- Chemical Etching of Germanium with H3PO4–H2O2–H2O SolutionJapanese Journal of Applied Physics, 1982
- Structures chimique et electronique de l'interface SiO2-SiApplications of Surface Science, 1981
- An ESCA Study of the Oxide at the Si ‐ SiO2 InterfaceJournal of the Electrochemical Society, 1975
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975
- Interface Properties of Al2O3-Ge Structure and Characteristics of Al2O3-Ge MOS TransistorsJapanese Journal of Applied Physics, 1971