Suppression of extraneous wall deposition by HCl injection in hydride vapor phase epitaxy of III–V semiconductors
- 31 October 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (3) , 507-515
- https://doi.org/10.1016/0022-0248(82)90371-2
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- 1.5–1.7 μm v.p.e. InGaAsP/InP c.w. lasersElectronics Letters, 1980
- Planar type vapor-phase epitaxial In0.53Ga0.47As photodiodeIEEE Electron Device Letters, 1980
- VPE Growth of InGaP / InGaAs Structures for Transferred‐Electron PhotocathodesJournal of the Electrochemical Society, 1980
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber MethodJapanese Journal of Applied Physics, 1980
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- Gas phase composition and extraneous deposition in GaAs vapor epitaxyJournal of Crystal Growth, 1976
- Selective Growth of Epitaxial Silicon and Gallium ArsenideJournal of the Electrochemical Society, 1971
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970
- Selective Epitaxial Deposition of Gallium Arsenide in HolesJournal of the Electrochemical Society, 1966
- The epitaxial deposition of silicon on quartzPhilosophical Magazine, 1964