A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz
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- 22 July 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 29 (8) , 824-826
- https://doi.org/10.1109/led.2008.2000921
Abstract
A 175-to-350 V hard-switched boost converter was constructed using a high-voltage GaN high-electron-mobility transistor grown on SiC substrate. The high speed and low on-resistance of the wide-band-gap device enabled extremely fast switching transients and low losses, resulting in a high conversion efficiency of 97.8% with 300-W output power at 1 MHz. The maximum efficiency was 98.0% at 214-W output power, well exceeding the state of the art of Si-based converters at similar frequencies.Keywords
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