Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy
- 5 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (14) , 1600-1602
- https://doi.org/10.1063/1.108598
Abstract
Scanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+‐ion bombarded Si(001) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+‐ion bombarded Si surfaces. The Ar+‐ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590 °C, at which a temperature (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620 °C, the areas of the (2×2) and c(4×4) reconstruction surrounded by amorphous regions develop. New defect models for the (2×2) and c(4×4) structures are proposed where alternating arrangements of the buckled dimers together with missing dimer defects are considered.Keywords
This publication has 10 references indexed in Scilit:
- Observation of surface reconstruction on silicon above 800 °C using the STMNature, 1991
- Structural model of Si(100)-Physical Review B, 1987
- Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopyApplied Physics Letters, 1985
- Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patternsApplied Physics Letters, 1983
- Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline SiJapanese Journal of Applied Physics, 1982
- Growth Conditions of Deposited Si Films in Solid Phase EpitaxyJapanese Journal of Applied Physics, 1981
- Epitaxial growth of Si deposited on (100) SiApplied Physics Letters, 1980
- Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniquesApplied Physics Letters, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975