Correlation between Surface Microroughness of Silicon Oxide Film and SiO2/Si Interface Structure
- 1 April 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (4A) , L397-399
- https://doi.org/10.1143/jjap.36.l397
Abstract
It was found, from combined measurements of the surface microroughness of silicon oxide film and the SiO2/Si interface structure, that the surface microroughness of thermal oxide film formed on a Si(111) surface changes periodically with the progress of oxidation in accordance with periodic changes in interface structures. Therefore, the changes in interface structures can be detected by measuring the oxidation-induced surface microroughness.Keywords
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