Analysis of the active layer in SI GaAs Schottky diodes
- 1 June 1998
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 410 (1) , 79-84
- https://doi.org/10.1016/s0168-9002(98)00166-1
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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