Performances of SI GaAs detectors fabricated with implanted ohmic contacts
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (3) , 1130-1136
- https://doi.org/10.1109/23.506650
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Calculation of the electric field in GaAs particle detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Characterization of deep-level defects in GaAs irradiated by 1 MeV electronsJournal of Applied Physics, 1993
- Native defects in gallium arsenideJournal of Applied Physics, 1988
- Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defectApplied Physics Letters, 1985
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Characterization of high resistivity CdTe for γ-ray detectorsNuclear Instruments and Methods, 1971
- Trapping and detrapping effects in lithium-drifted germanium and silicon detectorsNuclear Instruments and Methods, 1970
- Radial Resistivity Profile in High-Purity SiliconIEEE Transactions on Nuclear Science, 1970
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938
- Zum Mechanismus des lichtelektrischen Prim rstromes in isolierenden KristallenThe European Physical Journal A, 1932