Enhanced Crystallinity at Initial Growth Stage of Microcrystalline Silicon on Corning #7059 Glass Using SiH2Cl2
- 1 May 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (5B) , L554
- https://doi.org/10.1143/jjap.38.l554
Abstract
The crystallinity at the initial growth stage of hydrogenated microcrystalline silicon (µc-Si:H) was greatly improved on Corning #7059 glass substrate with dichlorosilane (SiH2Cl2) as the starting gas using conventional (13.56 MHz) capacitively coupled plasma-enhanced chemical vapor deposition system. Deposition studies examined film thickness, substrate temperature, total pressure, electrode distance and H2-dilution conditions as variables. Through Raman spectroscopy, atomic force microscopy (AFM), spectroscopic ellipsometry, X-ray diffraction (XRD) and Mie scattering measurements, it was found that ∼20 nm sized crystalline Si particles were formed in the plasma region, resulting in the enhanced crystallization from the initial growth stage. The growth kinetics of µc-Si:H from SiH2Cl2, compared with that from SiH4, is described.Keywords
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