Study of effect of SiH4 gas heating during growth of hydrogenated microcrystalline silicon on SiO2 by plasma-enhanced chemical-vapor deposition

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Abstract
The effect of SiH4 source gas heating on the properties of hydrogenated microcrystalline silicon film grown by plasma‐enhanced chemical‐vapor deposition was investigated to improve the crystallinity and inhomogeneities at the early stage of growth on an amorphous substrate such as glass. Optimization of the deposition conditions for μc‐Si:H film structure and characteristics was carried out for a film around 1000 Å thickness and as a function of the cathode heating temperature Tc. The grazing incidence x‐ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, and UV‐visible spectroscopic ellipsometry results showed that the SiH4 gas heating significantly improved the crystallinity and inhomogeneities from the early stage of Si thin film growth at Tc≳550 °C and Ts of 180 °C condition. The role and effect of the cathode heating in the μc‐Si:H growth is discussed.

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