Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry

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Abstract
Desorbed species from a substrate in metal-organic molecular beam epitaxy of GaAs using trimethylgallium (TMG) and As4 were studied by mass spectrometry. The observed Ga-containing species were mainly reflected TMG at all substrate temperatures ranging from 290 to 650°C. The TMG reflection decreased with an increase in the substrate temperature up to 520°C, indicating a decomposition of TMG on the GaAs surface. Above 520°C, the reflection of TMG increased and showed a small maximum at about 600°C. The temperature dependence of the reflected TMG accounts for the reported anomalous temperature dependence of the growth rate of GaAs by MOMBE.