A SIMS calibration exercise using multi-element (Cr, Fe and Zn) implanted GaAs

This publication has 10 references indexed in Scilit:

• Depth profiling of shallow arsenic implants in silicon using SIMS
  Surface and Interface Analysis, 1987
• High Purity III–V Compound Analyses by Modified CAMECA IMS 3F
  Published by Springer Nature ,1986
• A comparative study of SIMS depth profiling of boron in silicon
  Surface and Interface Analysis, 1984
• Chromium and iron impurities in liquid encapsulated Czochralski gallium arsenide
  Journal of Applied Physics, 1982
• Principles and Applications of a Dual Primary Ion Source and Mass Filter for an Ion Microanalyser
  Published by Springer Nature ,1982
• Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions
  Nuclear Instruments and Methods in Physics Research, 1981
• Calculation of projected ranges — analytical solutions and a simple general algorithm
  Nuclear Instruments and Methods, 1981
• Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometry
  Surface and Interface Analysis, 1980
• Ion implanted standards for secondary ion mass spectrometric determination of the Group IA-VIIA elements in semiconducting matrixes
  Analytical Chemistry, 1980
• Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant
  Applied Physics Letters, 1979