Depth profiling of shallow arsenic implants in silicon using SIMS
- 1 September 1987
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 10 (7) , 332-337
- https://doi.org/10.1002/sia.740100704
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Sputter-Induced Segregation of As in Si During SIMS Depth ProfilingPublished by Springer Nature ,1986
- The Use of Silicon Structures with Rapid Doping Level Transitions to Explore the Limitations of SIMS Depth ProfilingPublished by Springer Nature ,1986
- Empirical Modeling of Low Energy Boron Implants in SiliconJournal of the Electrochemical Society, 1985
- Surface transient behavior of the 30Si+ yield with angle of incidence and energy of an O+2 primary beamJournal of Vacuum Science & Technology A, 1985
- Profile distortion in SIMSSpectrochimica Acta Part B: Atomic Spectroscopy, 1984
- Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxideJournal of Applied Physics, 1984
- Nanometre structures in semiconductors formed by low energy ion implantationVacuum, 1984
- Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscatteringApplied Physics Letters, 1981
- The influence of bombardment conditions upon the sputtering and secondary ion yields of siliconApplications of Surface Science, 1981
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980