Nanometre structures in semiconductors formed by low energy ion implantation
- 1 January 1984
- Vol. 34 (1-2) , 193-197
- https://doi.org/10.1016/0042-207x(84)90126-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Semiconductor structures for repeated velocity overshootIEEE Electron Device Letters, 1982
- Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)Japanese Journal of Applied Physics, 1982
- Range distributions and thermal-annealing properties of low-energy arsenic and indium implants in siliconNuclear Instruments and Methods in Physics Research, 1982
- Low energy range distributions of 10B and 11B in amorphous and crystalline siliconNuclear Instruments and Methods in Physics Research, 1982
- Limits to solid solubility in ion implanted siliconNuclear Instruments and Methods, 1981
- Shallow implanted layers in advanced silicon devicesNuclear Instruments and Methods, 1981
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- A radiotracer technique for measuring the reflection of heavy ions (of keV energies) from solid surfacesRadiation Effects, 1971