Modelling of semiconductor nanostructured devices within the tight-binding approach
- 22 July 1999
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 11 (31) , 6035-6043
- https://doi.org/10.1088/0953-8984/11/31/311
Abstract
A self-consistent tight-binding approach applied to semiconductor nanostructures is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Examples of applications are given for high-electron-mobility transistors and semiconductor optical amplifiers.Keywords
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