Optimization of Back Channel Leakage Characteristic in PD SOI p-MOSFET
- 1 January 2010
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 157 (9) , H875
- https://doi.org/10.1149/1.3459931
Abstract
[[abstract]]The impact of back channel leakage (BCL) is thoroughly investigated when scaling down partially depleted (PD) silicon-on-insulator (SOI) devices. Back channel voltage is introduced as an indicator for monitoring the behavior of BCL. In addition to front-gate devices, back-gate devices also suffer from short channel effect. Finally, BCL can be successfully suppressed by optimizing process parameters such as the Si remains, the well implant, and the SOI thickness.[[fileno]]2030103010046[[department]]電機工程學Keywords
This publication has 14 references indexed in Scilit:
- A 90-nm logic technology featuring strained-siliconIEEE Transactions on Electron Devices, 2004
- Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide codeIEEE Transactions on Nuclear Science, 2000
- The behavior of narrow-width SOI MOSFETs with MESA isolationIEEE Transactions on Electron Devices, 2000
- Approaches to extra low voltage DRAM operation by SOI-DRAMIEEE Transactions on Electron Devices, 1998
- Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substratesIEEE Transactions on Nuclear Science, 1997
- Measurement and modeling of self-heating in SOI nMOSFET'sIEEE Transactions on Electron Devices, 1994
- Back channel uniformity of thin SIMOX wafersIEEE Transactions on Nuclear Science, 1991
- Rapid electrical measurements of back oxide and silicon film thickness in an SOI CMOS processIEEE Transactions on Electron Devices, 1991
- Analysis of the kink effect in MOS transistorsIEEE Transactions on Electron Devices, 1990
- Leakage currents in SOI MOSFETsIEEE Transactions on Nuclear Science, 1988