Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates
- 1 December 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 44 (6) , 2101-2105
- https://doi.org/10.1109/23.659024
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- SOI: materials to systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Screening SIMOX for VLSI and ULSI chip productionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafersIEEE Electron Device Letters, 1992
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