Gain dynamics and saturation in semiconductor quantum dot amplifiers
Open Access
- 27 November 2004
- journal article
- Published by IOP Publishing in New Journal of Physics
- Vol. 6, 178
- https://doi.org/10.1088/1367-2630/6/1/178
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Geometry dependence of Auger carrier capture rates into cone-shaped self-assembled quantum dotsPhysical Review B, 2003
- Quantum dot amplifiers with high output power and low noiseApplied Physics Letters, 2003
- Single-mode distributed feedback and microlasers based on quantum-dot gain materialIEEE Journal of Selected Topics in Quantum Electronics, 2002
- One- and two-phonon capture processes in quantum dotsJournal of Applied Physics, 2002
- High-performance 980 nm quantum dot lasers forhigh-power applicationsElectronics Letters, 2001
- Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasersApplied Physics Letters, 2001
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structuresIEEE Journal of Quantum Electronics, 2000
- Low-threshold quantum dot lasers with 201 nm tuningrangeElectronics Letters, 2000
- Dephasing in InAs/GaAs quantum dotsPhysical Review B, 1999
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986