Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
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- 21 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (9) , 1207-1209
- https://doi.org/10.1063/1.1350596
Abstract
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum-dot lasers are achieved by the application of an annealing and growth interruption step at 600 °C after the deposition of the dots. The transparency current is reduced to below 20 A/cm2 at room temperature. The internal differential quantum efficiency is increased from below 50% to above 90% by improvement of the barrier material and subsequent reduction of leakage current. A peak power of 3.7 W at 1140 nm lasing wavelength in pulsed operation at room temperature is demonstrated.Keywords
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