Dislocation scattering effects on electron mobility in InAsSb
- 1 March 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (5) , 2473-2476
- https://doi.org/10.1063/1.356244
Abstract
Heteroepitaxial InAsSb is routinely prepared on InAs, InSb, or GaAs substrates under conditions favorable to dislocation formation, since the binary components are lattice mismatched by about 7.4%, and the ternary are mismatched to GaAs by between 7.2% and 14.5%, depending on composition. We here extend the description of electron scattering in InAsSb to include the effects of grain boundaries and dislocations. Comparison with experiment confirms that dislocation scattering has a strong effect on transport, while alloy scattering limits mobility in ternary samples grown with a minimum of defects.This publication has 22 references indexed in Scilit:
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