A preliminary study of the formation of WSi2by high-current W ion implantation
- 2 August 1993
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 5 (31) , 5505-5512
- https://doi.org/10.1088/0953-8984/5/31/014
Abstract
Two differently structured WSi2 phases were formed by direct W ion implantation, for the first time, into silicon wafers using a metal vapour vacuum arc ion source. Implantation of W ions was conducted with an extract voltage of 40 kV, various beam densities from 50 to 115 mu A cm-2 and a fixed dose of 5*1017 cm-2. It was found that the formation of WSi2 with either a hexagonal or a tetragonal structure depended on the ion current density. The temperature rise caused by beam heating and the beam-striking time related to the dose were calculated, and they were responsible for the formation and evolution related to the differently structured WSi2 phases.Keywords
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