Ion-beam synthesis of a Si/β-FeSi2/Si heterostructure
- 30 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14) , 1737-1739
- https://doi.org/10.1063/1.106235
Abstract
Ion‐beam synthesis of a buried β‐FeSi2 layer in Si is demonstrated. In the experiments Si(111) substrates have been implanted with 450‐keV Fe+ ions. Samples have been analyzed by Rutherford backscattering spectrometry, x‐ray diffraction, and transmission electron microscopy. Annealing at 900 °C of samples implanted with 6×1017 Fe+/cm2 causes formation of a buried layer consisting of grains with lateral dimensions of approximately 5 μm. The epitaxy of β‐FeSi2 (110) and/or (101) planes parallel to the Si(111) substrate plane is observed.Keywords
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