Characteristics of TiO2 coatings produced by the reactive ionized cluster beam method
- 1 April 1992
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 51 (1-3) , 197-202
- https://doi.org/10.1016/0257-8972(92)90238-6
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam depositionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Oxygen-Sensitive Surface Layer in Pt/TiO2 Composite FilmJapanese Journal of Applied Physics, 1990
- Surface smoothness and crystalline structure of ICB deposited TiO2 filmsApplied Surface Science, 1989
- Growth processes of epitaxial metal films on semiconductor and insulator substrates by ionized cluster beamApplied Surface Science, 1989
- Electrical properties of TiO2 films deposited by a reactive-ionized cluster beamJournal of Applied Physics, 1989
- Metallization by ionized cluster beam depositionIEEE Transactions on Electron Devices, 1987
- Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam depositionSurface Science, 1986
- Characteristics of TiO2 films deposited by a reactive ionized cluster beamJournal of Applied Physics, 1985
- Breakdown of Oxide Films on Steel Exposed to Chloride SolutionsCorrosion, 1981
- Characterized Semiconductor Electrodes: I . Effect of Processing Variables on the Photoelectrochemical Properties of Single Crystal (Rutile)Journal of the Electrochemical Society, 1979