A single supply device technology for wireless applications
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Single supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of HBT and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET device (HIGFET) which is suitable for use in both digital and analog power amplifiers and in addition to this, shows promise for use in small signal receiver applications.Keywords
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