Parasitic MOSFET degradation induced by Fowler-Nordheim injection
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (12) , 590-592
- https://doi.org/10.1109/55.63049
Abstract
Degradation induced by Fowler-Nordheim (F-N) electron injection is observed in a parasitic MOS transistor associated with a MOS transistor's edge region. A bump appears in the subthreshold region of both an n-channel transistor after positive gate biased F-N injection and a p-channel transistor after negative gate biased F-N injection. It is found that the effective gate-oxide thickness of a parasitic transistor is 30 nm. As thinner gate oxide is used, the amount of the charge injected into the gate oxide may increase due to increased electric fields.Keywords
This publication has 7 references indexed in Scilit:
- Reliability of MOSFETs as affected by the interface trap transformation processIEEE Electron Device Letters, 1989
- Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injectionApplied Physics Letters, 1988
- Post-Irradiation Effects in Field-Oxide Isolation StructuresIEEE Transactions on Nuclear Science, 1987
- Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent BiasesIEEE Transactions on Nuclear Science, 1987
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Correlation of Hot-Carrier and Radiation Effects in MOS TransistorsIEEE Transactions on Nuclear Science, 1985
- An empirical model for device degradation due to hot-carrier injectionIEEE Electron Device Letters, 1983