Correlation of Hot-Carrier and Radiation Effects in MOS Transistors
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 3935-3939
- https://doi.org/10.1109/tns.1985.4334046
Abstract
The effects of processing variations on the hot-carrier susceptibility of radiation-hardened CMOS transistors have been examined. It has been determined that many process variations which enhance radiation hardness also reduce hot-carrier-induced device degradation. The interactions of radiation and hot-carrier effects are demonstrated not to be additive.Keywords
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