A High-Density Dual-Port Memory Cell Operation For ULSI DRAMs

Publisher Website

1 January 1991

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 65-66
https://doi.org/10.1109/vlsic.1991.760080

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Transparent-refresh DRAM (TReD) using dual-port DRAM cell
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
A 32 K ASIC synchronous RAM using a two-transistor basic cell
IEEE Journal of Solid-State Circuits, 1989