Study of MBE growth of GexSi1−x on {111} vicinal surfaces of Si substrates
- 1 September 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (5) , 1860-1863
- https://doi.org/10.1063/1.336305
Abstract
GexSi1−x thin films were grown by molecular beam epitaxy on Si substrates which were purposely miscut ∼3° off the (111) face, toward the [011] pole. Rutherford backscattering channeling angular scans show that the miscut causes the Ge‐rich alloy films to grow with an apparent crystallographic tilt relative to the substrate. Transmission electron microscopy micrographs reveal that these films contain many slip‐induced stacking faults along a preferential direction. These results are explained in terms of a difference in the magnitude of the resolved shear stress, caused by the lattice mismatch and the 3° miscut.This publication has 8 references indexed in Scilit:
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