Incorporation of in by recoil implantation during MBE growth of Si(100)
- 4 April 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 214 (1-2) , 149-164
- https://doi.org/10.1016/0039-6028(89)90414-7
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Surface segregation of Sb on Si(100) during molecular beam epitaxy growthSurface Science, 1988
- GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μmApplied Physics Letters, 1986
- Doping by Secondary ImplantationJournal of the Electrochemical Society, 1986
- Silicon MBE: Recent developmentsSurface Science, 1986
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985
- Enhanced sticking coefficients and improved profile control using boron and antimony as coevaporated dopants in Si–MBEJournal of Vacuum Science & Technology B, 1985
- Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregationSurface Science, 1985
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977