Heteroepitaxy of GaP-AlxGa1−xP system by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP)
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 297-301
- https://doi.org/10.1016/0022-0248(90)90531-o
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Lateral optical confinement of the heterostructure semiconductor Raman laserApplied Physics Letters, 1987
- Homogeneous (Ga,Al)P alloy grown by the temperature difference methodJournal of Applied Physics, 1982
- Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressureIEEE Transactions on Electron Devices, 1975