Future CMOS scaling and reliability
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 81 (5) , 682-689
- https://doi.org/10.1109/5.220900
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Circuit reliability simulator-oxide breakdown modulePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Threshold voltage model for deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1993
- IC reliability simulationIEEE Journal of Solid-State Circuits, 1992
- A circuit level hot-carrier evaluation systemIEEE Journal of Solid-State Circuits, 1991
- Performance and reliability design issues for deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1991
- Projecting gate oxide reliability and optimizing reliability screensIEEE Transactions on Electron Devices, 1990
- Projecting interconnect electromigration lifetime for arbitrary current waveformsIEEE Transactions on Electron Devices, 1990
- Choice of power-supply voltage for half-micrometer and lower submicrometer CMOS devicesIEEE Transactions on Electron Devices, 1990
- MOS Device and technology constraints in VLSIIEEE Transactions on Electron Devices, 1982
- Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effectIEEE Transactions on Electron Devices, 1979