Electronic structure, impurity binding energies, absorption spectra of InAs/GaAs quantum dots
- 1 October 1998
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 253 (1-2) , 10-27
- https://doi.org/10.1016/s0921-4526(98)00389-5
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dotsApplied Physics Letters, 1996
- Exciton localization and temperature stability in self-organized InAs quantum dotsApplied Physics Letters, 1996
- Ultranarrow Luminescence Lines from Single Quantum DotsPhysical Review Letters, 1995
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structuresApplied Physics Letters, 1985
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983