Seeded Electron Beam Recrystallization of Large Area SOI Using Striped Tungsten Encapsulation Technique
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A) , L899
- https://doi.org/10.1143/jjap.26.l899
Abstract
Large area SOI (silicon on insulator) film with (001) orientation has been produced by applying a seeded electron beam recrystallization technique to the specimen with striped encapsulation. The encapsulation stripes consisted of tungsten and polysilicon. A pseudoline electron beam was scanned parallel to the stripes. A 400 µm×800 µm area had become a single crystal including subgrain boundaries in one sweep. These subgrain boundaries were confined to the region between the encapsulation stripes. The orientation of the crystal gradually rotates from (001)[110] to (103)[331̄] as recrystallization propagated away from the seed.Keywords
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